Samsung Electronics Vice Chairman Lee Jay-yong.

Samsung Electronics has embarked upon a new chapter in its “semiconductor legacy” by using the through-silicon via (TSV) technology, which is a major departure from the conventional method of wire-bond flip chip stacking. The Korean electronics giant has succeeded in the development of the 128GB DRAM modules for servers using the TSV technology. 

The latest module will be capable of handling 15 movie video pieces at full HD 1,080p at a time. In particular, the DRAM module, outfitted with the technology, will be faster and come with halve the power consumption of the conventional one.

Samsung Electronics said on Nov. 26 that it began to mass-produce 128-gigabye service DRAM modules. The company has succeeded in bringing out a DRAM product whose capacity is twice as much as the previous version in 15 months since it released the 64GB iteration in August 2014. The latest module contains144 8-gigabye DDR4 DRAMs. The latest module adopts the TSV technology, a kind packing technology using vertical interconnections passing through a silicon wafer, guaranteeing higher energy-efficiency and speed than wire-bond or flip chip stacking. 

In reality, 128GB DRAM products are twice as fast as 64GB ones and use half the electricity. 

Industry analysts said the latest server DRAM module will draw heavily on the ICT market. This is the reason the spread of social network services and cloud computing, as well as other mobile platform services, grow data amounts exponentially. 

The company said the memory module, which uses through-silicon via (TSV) technology, will help its global clients build high-efficiency enterprise servers that will enable them to better manage their data centers. The TSV refers to technology utilizing vertical interconnections passing through a silicon wafer, guaranteeing higher energy-efficiency and speed than wire-bond or flip chip stacking.

The registered dual in-line memory module (RDIMM) offers processing speeds of up to 3,200 megabits-per-second (Mbps.

"Mass-production will enable global IT giants to launch their next-generation server systems in a timely manner," said Choi Joo-sun, executive vice president at the company's memory business division. "Samsung Electronics will continue to expand our customer base by forming more technology partnership with global IT market leaders."

In August 2014, the company started mass-producing 64-gigabyte double data rate (DDR) 4 DRAM modules, opening the era of the DRAM market with three-dimensional (3D) TSV technology.

Samsung said it will lead the global premium memory market by expanding the use of TSV technology.

The company said that it plans to mass produce the 128-gigabyte DDR4 load reduced dual in-line memory module (LRDIMM) by the end of this year, boosting its drive to become the world's leading memory provider by offering a full TSV lineup.

Samsung's share of the global DRAM market reached a record 45.2 percent in the second quarter of this year, followed by 27.3 percent for SK hynix, according to a report by market research firm IHS. 

Micron Technology was third with 20.4 percent.

Samsung Electronics has succeeded in the development of the 128GB DRAM modules for servers using the through-silicon via (TSV) technology.(Photos:Samsung Electronics)